STGB50H65FB2

Overview

The STGB50H65FB2 is a single N-channel IGBT from the HB2 series, manufactured by STMicroelectronics. It utilizes a trench gate field-stop structure and is housed in a D2PAK package for surface-mount installation. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 50 A at 25°C. Key electrical parameters include a typical saturation voltage of 1.55 V at 50 A, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 272 W. It operates within a temperature range of -55°C to +175°C.

Feature Summary

• Optimized conduction performance through improved VCE(sat) behavior at low current values.
• Reduced switching energy and minimized tail current for high-speed applications.
• Positive VCE(sat) temperature coefficient enabling safer parallel operation.
• Tight parameter distribution ensuring consistent performance across units.

Applications

• High-efficiency frequency converters
• Fast-switching power supply circuits
• Industrial motor drives

Part Context

This component belongs to the HB2 series of 650 V IGBTs, representing an evolution of the proprietary trench gate field-stop structure. It is designed to maximize efficiency in fast applications by balancing conduction losses and switching energy. The series focuses on optimizing performance at low current values while maintaining robust switching characteristics suitable for demanding power electronics environments.

Replacement Considerations

The STGWA50HP65FB2 shares identical electrical specifications (650V, 50A, 1.55V VCE(sat)) but uses a TO-247-3 through-hole package instead of the D2PAK surface-mount format. Designers must account for significant differences in thermal management requirements and PCB layout constraints when substituting between these packages.