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The STGB7H60DF is a single N-channel IGBT from the H series, utilizing trench gate field-stop technology. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current of 14 A at 25 °C. The device exhibits a collector-emitter saturation voltage of 1.5 V and supports a power dissipation of 88 W. Operating temperatures range from -55 °C to +150 °C, with a maximum junction temperature of 175 °C. It is housed in a surface-mount package.
This component has reached end-of-life status. A discontinuation notification was issued on June 20, 2025. Manufacturers will cease production. Verify availability through remaining stock channels or initiate replacement planning immediately. Do not rely on future manufacturing runs.
Select this part only if legacy compatibility is required. Consider the EOL status when designing new products. Evaluate thermal management capabilities given the 88 W dissipation rating. Ensure circuit protection aligns with short-circuit ratings. Check alternative active series members for long-term supply security.
Part of the STMicroelectronics H series IGBT lineup. Shares trench gate field-stop architecture with models like STGP10H60DF and STGD5H60DF. Designed for balanced conduction and switching losses. Differentiated by specific current and voltage ratings within the family.
STGP10H60DF offers similar H series technology with higher current capacity. STGD5H60DF provides lower current options within the same active product line. Verify pinout and thermal resistance compatibility before substitution.