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The STGD25N36LZAG is an automotive-grade N-channel Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics, designed for high-reliability applications. It features a collector-emitter voltage (Vceo) of 450 V and a continuous collector current (Ic) of 25 A. The device utilizes advanced PowerMESH technology to achieve very low saturation voltage and high short-circuit withstand capability. Key electrical parameters include a maximum power dissipation of 150 W, a gate-emitter voltage rating of 16 V, and a switching speed of 8.4 μs. It operates within a temperature range of -55°C to +175°C and is housed in a surface-mount TO-252 package.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 qualification grade for your target application. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Select this IGBT when designing circuits requiring 450 V blocking capability and 25 A continuous current handling in automotive environments. Consider its 8.4 μs switching speed and 150 W power dissipation limits for thermal management. Ensure the gate drive circuit supports logic-level inputs and provides adequate protection given the integrated clamping features.
This component belongs to STMicroelectronics' automotive-grade IGBT family utilizing PowerMESH technology. It is specifically optimized for coil driving applications in harsh automotive environments. The device shares design characteristics with other models in the series, such as the STGB25N36LZAG, but differs in package type and specific voltage ratings.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs by comparing pinout, voltage ratings, and thermal characteristics with alternative IGBTs from the same manufacturer or other vendors.