ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 7.5A DPAK
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：7.5 A
- Current - Collector Pulsed (Icm)：18 A
- Vce(on) (Max) @ Vge, Ic：2.95V @ 15V, 1.5A
- Power - Max：38 W
- Switching Energy：19µJ (on), 12µJ (off)
- Input Type：Standard
- Gate Charge：12 nC
- Td (on/off) @ 25°C：11ns/60ns
- Test Condition：400V, 1.5A, 100Ohm, 15V
- Reverse Recovery Time (trr)：85 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Grade：-
- Qualification：-
Download product information
Overview
The STGD3HF60HDT4 is a high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics, designed for efficient power switching. It features a Trench Gate Field-Stop technology that optimizes the balance between conduction and switching losses. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 3 A. Packaged in a TO-220FPAB format for through-hole mounting, it operates within a junction temperature range of -55°C to 175°C. Key electrical parameters include a typical saturation voltage of 1.9 V at 3 A and a maximum gate-emitter voltage of ±20 V.
Feature Summary
- Advanced Trench Gate Field-Stop structure for optimized performance
- High-speed switching characteristics with minimized tail current
- Integrated ultrafast soft-recovery antiparallel diode
- Positive VCE(sat) temperature coefficient for safe paralleling
Applications
- High-frequency resonant converters
- Soft-switching power supplies
- Motor drive inverters
Procurement Notes
Verify the specific ordering suffix to confirm package variant and tape/reel specifications. Ensure the component matches the required thermal resistance and pinout configuration for the target PCB layout. Cross-reference the datasheet revision date to confirm parameter stability and compliance with current industry standards before finalizing procurement.
Selection Notes
Select this IGBT for applications requiring high efficiency at moderate current levels up to 3 A. The low saturation voltage reduces conduction losses, while the fast switching speed minimizes dynamic losses. Consider the thermal management requirements given the 175°C maximum junction temperature capability and the specific package thermal resistance values provided in the official documentation.
Part Context
This component belongs to STMicroelectronics' high-speed IGBT portfolio utilizing Trench Gate Field-Stop technology. It is engineered to provide an optimal compromise between conduction and switching losses, making it suitable for modern power conversion systems where efficiency and switching frequency are critical design constraints.
Replacement Considerations
Direct replacements must match the 600V/3A rating, TO-220FPAB package, and Trench Gate Field-Stop topology. Verify equivalent VCE(sat), switching times, and diode recovery characteristics. Consult official substitution lists for confirmed compatible parts.
