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Product Detailed Parameters
- Description：IGBT 1200V 16A IPAK
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：16 A
- Current - Collector Pulsed (Icm)：20 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 3A
- Power - Max：105 W
- Switching Energy：236µJ (on), 290µJ (off)
- Input Type：Standard
- Gate Charge：24 nC
- Td (on/off) @ 25°C：15ns/118ns
- Test Condition：800V, 3A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
- Supplier Device Package：IPAK (TO-251)
- Grade：-
- Qualification：-
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Overview
The STGD3NC120H-1 is an N-channel IGBT from STMicroelectronics, designed for high-frequency applications. It features a maximum collector-emitter voltage (Vceo) of 1200 V and a continuous collector current (Ic) of 3 A. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation (Pd) of 18 W. Packaged in a TO-220 through-hole housing with three pins, it exhibits a switching speed of 1 MHz. Key electrical parameters include a maximum gate-emitter voltage (Vgeo) of 20 V and a collector-emitter saturation voltage (VceSAT) of 3.5 V.
Feature Summary
- Optimized for high-frequency operation with reduced fall time while maintaining low voltage drop
- Low on-voltage drop (Vcesat) for efficient conduction
- Low CRES/CIES ratio to minimize cross-conduction susceptibility
- Suitable for hard-switched and resonant topologies
Applications
- High frequency inverters
- SMPS and PFC in both hard switch and resonant topologies
- Motor drivers
Procurement Notes
Verify the specific ordering suffix against official datasheets to confirm exact electrical characteristics and package variations. Ensure compatibility with existing thermal management designs due to the TO-220 form factor. Cross-reference manufacturer part numbers directly to avoid substitution errors in critical high-frequency circuits.
Selection Notes
Select this component for designs requiring high switching frequencies up to 1 MHz with moderate current handling capabilities. The 1200 V rating suits medium-voltage industrial applications. Consider the 18 W power dissipation limit when designing heatsinking solutions for continuous operation at elevated ambient temperatures.
Part Context
This device belongs to the PowerMESH IGBT family, utilizing patented strip layout technology for advanced performance. The 'H' suffix indicates optimization for high-frequency applications, balancing fast switching with low conduction losses. It represents a specialized variant within ST's broader IGBT portfolio tailored for resonant and high-speed converter designs.
Replacement Considerations
Direct substitutes may include other STMicroelectronics PowerMESH IGBTs with similar voltage and current ratings, such as the STGF3NC120HD or STGP3NC120HD, provided pinout and thermal characteristics match. Verify switching times and Vce(sat) values carefully before replacement.
