STGD4H60DF

Overview

The STGD4H60DF is a high-speed trench gate field-stop IGBT from the H series, rated at 600 V and 4 A in a DPAK package. It features a maximum junction temperature of 175 °C and a typical saturation voltage of 1.6 V at 4 A. The device offers low thermal resistance (2 °C/W junction-to-case) and short-circuit withstand capability. Key electrical parameters include a collector-emitter breakdown voltage of 600 V, continuous collector current of 8 A at 25 °C, and total gate charge of 35 nC. Switching characteristics show turn-on energy of 68 μJ and turn-off energy of 45 μJ at 400 V and 3 A.

Feature Summary

• Advanced proprietary trench gate field-stop structure for optimized conduction and switching loss compromise.
• Slightly positive VCE(sat) temperature coefficient enabling safer paralleling operation.
• Soft and fast recovery antiparallel diode integrated with the IGBT chip.

Applications

• Industrial motor control
• Dishwashers
• Refrigerators and freezers
• Fans

Procurement Notes

Verify the specific ordering code STGD4H60DF against the latest datasheet revision DS13901 Rev 2 to ensure compatibility with design requirements. Confirm that the DPAK tape and reel packaging meets assembly line specifications. Check for any environmental compliance grades available under the ECOPACK program before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high switching frequency efficiency within the H series family. Ensure the operating junction temperature remains within the -55 to 175 °C range. Verify that the gate drive circuit can handle the specified 35 nC total gate charge and ±20 V gate-emitter voltage limits safely.

Part Context

This device belongs to the STMicroelectronics H series of trench gate field-stop IGBTs. It shares structural similarities with other models like STGD5H60DF and STGP10H60DF but is distinguished by its 4 A current rating and DPAK packaging. The series focuses on balancing conduction and switching losses for high-frequency converter efficiency.

Replacement Considerations

Direct substitutes within the same package and rating are limited in public documentation. Consider STGD5H60DF for slightly higher current capacity or STGP10H60DF for different power levels, provided pinout and thermal characteristics are compatible. Always verify electrical parameter overlaps before substitution.

FAQ

What is the short-circuit withstand time for the STGD4H60DF?

The short-circuit withstand time is specified as 3 μs under conditions of VCC ≤ 360 V, VGE = 15 V, and RG = 47 Ω.

How does the VCE(sat) vary with temperature?

The device exhibits a slightly positive VCE(sat) temperature coefficient, increasing from a typical 1.5 V at 25 °C to 1.7 V at 175 °C when IC = 3 A.

What is the reverse recovery charge of the antiparallel diode?

At TJ = 25 °C, the reverse recovery charge (Qrr) is typically 66 nC. At TJ = 175 °C, it increases to a typical value of 206 nC.