STGD4M65DF2

Overview

The STGD4M65DF2 is a single N-channel IGBT from the M series, utilizing trench gate field-stop technology. It features a 650 V collector-emitter voltage rating and a continuous collector current of 8 A at 25 °C. The device has a typical saturation voltage of 1.55 V and a maximum power dissipation of 73 W in a DPAK-3 (TO-252-3) package. It operates within a junction temperature range of -55 °C to +175 °C.

Feature Summary

• Trench gate field-stop structure for low conduction losses
• Positive VCE(sat) temperature coefficient for safe paralleling
• Soft and fast-recovery antiparallel diode
• Short-circuit withstand capability

Applications

• Inverter systems requiring high efficiency
• Motor drives and control applications
• Switched-mode power supplies

Procurement Notes

Verify the specific ordering suffix against official STMicroelectronics documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement.

Selection Notes

Select this component for designs prioritizing low thermal resistance and efficient switching in compact surface-mount layouts. Ensure the application circuit supports the required short-circuit withstand time and that the gate drive voltage remains within the specified limits for optimal performance.

Part Context

This part belongs to the STMicroelectronics M series of IGBTs, designed to balance inverter system performance and efficiency. The series emphasizes low-loss operation and robust short-circuit functionality, making it suitable for modern power conversion architectures.

Replacement Considerations

Direct replacements include other M series IGBTs with similar voltage and current ratings, such as the STGB10M65DF2 or STGP4M65DF2, provided the package and electrical characteristics align with the design requirements.