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Product Detailed Parameters
- Description：IGBT 600V 15A TO-251
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：15 A
- Current - Collector Pulsed (Icm)：21 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 3A
- Power - Max：62.5 W
- Switching Energy：20µJ (on), 68µJ (off)
- Input Type：Standard
- Gate Charge：13.6 nC
- Td (on/off) @ 25°C：12ns/76ns
- Test Condition：390V, 3A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
- Supplier Device Package：TO-251 (IPAK)
- Grade：-
- Qualification：-
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Overview
The STGD6NC60H-1 is a single N-channel IGBT from the PowerMESH™ family, utilizing patented strip layout technology for high-frequency optimization. It features a 600 V collector-emitter voltage rating and a continuous collector current of 15 A at 25°C. The device operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a collector-emitter saturation voltage of 1.9 V, a gate-emitter leakage current of 100 nA, and a maximum power dissipation of 62.5 W. It is housed in an IPAK-3 through-hole package.
Feature Summary
- Optimized for high-frequency applications with reduced fall time while maintaining low voltage drop
- Low CRES/CIES ratio to prevent cross-conduction susceptibility
- Patented strip layout technology for outstanding performance
Applications
- High frequency inverters
- SMPS and PFC in both hard switch and resonant topologies
- Motor drivers
Procurement Notes
Verify the specific suffix H-1 against official datasheets to confirm it denotes the high-frequency optimized variant within the PowerMESH family. Ensure the IPAK-3 through-hole package matches the thermal and mechanical requirements of the target PCB design. Confirm RoHS compliance status via the manufacturer's latest documentation before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring very fast switching speeds and low on-state voltage drop. The IPAK-3 package suits applications needing robust through-hole mounting. Compare the 15 A continuous current and 62.5 W power dissipation limits against peak load demands to ensure adequate thermal headroom under operating conditions.
Part Context
This part belongs to the PowerMESH™ IGBT series developed by STMicroelectronics. The series leverages advanced high-voltage silicon technology. The 'H' designation specifically identifies devices optimized for high-frequency operation, distinguishing them from standard variants within the broader product line.
Replacement Considerations
The STGP6NC60HD shares similar electrical ratings but uses a TO-220-3 package instead of IPAK-3. Verify pinout compatibility and thermal management differences before substituting. Other PowerMESH™ variants may offer different current or voltage ratings.
