SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The STGD6NC60HT4 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes advanced PowerMESH™ technology to achieve an optimal balance between low on-state voltage drop and high-speed switching performance. The device features a very fast ultra-fast recovery antiparallel diode, making it suitable for resonant or soft-switching applications. Key electrical parameters include a collector-emitter breakdown voltage of 600 V, a continuous collector current of 15 A at 25°C, and a maximum power dissipation of 63 W. It operates within a junction temperature range of -55°C to +150°C.
Verify the exact suffix against official documentation, as 'HT4' may indicate specific tape-and-reel packaging or regional variants distinct from standard 'HDT4'. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure ordering quantities match the manufacturer's minimum reel specifications to avoid cut-tape surcharges.
Select this component for designs requiring high efficiency in resonant or soft-switching environments where low switching losses are critical. The 600V rating suits general-purpose AC-DC conversion and motor drive applications. Verify thermal management requirements given the 63W dissipation limit in the DPAK package.
This part belongs to the STGxNC60HD series of 600V IGBTs. It shares the same core die and electrical characteristics as the STGD6NC60HDT4, differing primarily in packaging configuration or distribution channel designation. It is designed to replace older generation IGBTs in high-frequency applications.
Direct functional equivalents include the STGD6NC60HDT4. For higher current needs, consider the STGB7NC60HDT4. Always verify pinout compatibility and thermal resistance values before substituting.