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Product Detailed Parameters
- Description：IGBT 600V 15A 62W DPAK
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：15 A
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.75V @ 15V, 3A
- Power - Max：62 W
- Switching Energy：55µJ (on), 85µJ (off)
- Input Type：Standard
- Gate Charge：19 nC
- Td (on/off) @ 25°C：17ns/72ns
- Test Condition：390V, 3A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Grade：-
- Qualification：-
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Overview
The STGD8NC60KT4 is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a collector-emitter voltage rating of 600 V and a continuous collector current capacity of 16 A at a case temperature of 100 °C. The device utilizes advanced PowerMESH technology to achieve low on-state voltage drop and optimized switching performance. It is housed in a surface-mount TO-263 package, designed for high-frequency applications requiring robust short-circuit withstand capability.
Feature Summary
- Advanced PowerMESH technology ensures excellent trade-off between switching performance and low on-state behavior
- Integrated very soft ultra-fast recovery antiparallel diode minimizes cross-conduction susceptibility
- Short-circuit rugged design provides 10 μs withstand time under specified conditions
Applications
- High frequency inverters
- Motor drives
- Resonant or soft-switching applications
Procurement Notes
Verify component authenticity through authorized STMicroelectronics distributors. Confirm the specific ordering suffix matches the required tape-and-reel packaging configuration. Check for RoHS compliance documentation and ensure the part number corresponds to the active or end-of-life status indicated in official catalogs before finalizing procurement plans.
Selection Notes
Select this IGBT for designs requiring 600 V blocking capability with moderate current handling. Ensure thermal management solutions support the specified power dissipation limits. Verify that gate drive circuits accommodate the ±20 V maximum gate-emitter voltage rating. Consider the integrated freewheeling diode characteristics when designing snubber circuits for inductive loads.
Part Context
This component belongs to the STGxNC60KD series of short-circuit rugged IGBTs. It shares architectural similarities with other members like STGD10NC60KT4 but differs in current ratings. The series is characterized by its use of PowerMESH technology for improved efficiency in power conversion systems.
Replacement Considerations
Direct substitutes within the same family include STGD10NC60KT4 for higher current requirements. Cross-brand replacements require careful evaluation of pin compatibility, thermal resistance, and electrical parameters such as Vce(sat) and switching times.
