SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The STGDL6NC60DIT4 is a single N-channel IGBT from STMicroelectronics, housed in a DPAK (TO-252) surface-mount package. It features a 600 V collector-emitter breakdown voltage and a continuous collector current of 6 A to 13 A, depending on specific datasheet conditions. The device integrates an ultrafast soft-recovery antiparallel diode, classifying it as a hyper-fast IGBT. Maximum power dissipation is rated at 43 W to 50 W, with a maximum junction temperature of 150°C. It complies with RoHS standards.
Verify component status carefully, as the STGDL6NC60DIT4 is listed as obsolete by major distributors such as DigiKey. Sourcing may be limited to existing stock or third-party suppliers rather than direct manufacturer production. Confirm availability and authenticity through authorized channels before finalizing procurement plans.
Select this component for designs requiring integrated freewheeling diodes in a compact surface-mount form factor. Ensure the application current remains within the 6 A to 13 A range and voltage stresses do not exceed 600 V. Consider thermal management requirements given the 43 W to 50 W power dissipation rating in the TO-252 package.
This part belongs to STMicroelectronics' IGBT portfolio, specifically designed for medium-power applications. It combines the switching capabilities of an IGBT with the recovery properties of a dedicated diode, simplifying circuit topology by eliminating the need for external parallel diodes in many configurations.
Check for active substitutes via distributor links provided for obsolete parts. No specific public substitute part numbers are confirmed in the source data.