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Product Detailed Parameters
- Description：IGBT MOD 600V 200A 600W ISOTOP
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 100A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：ISOTOP
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：200 A
- Power - Max：600 W
- Current - Collector Cutoff (Max)：500 µA
- Input Capacitance (Cies) @ Vce：1.56 nF @ 25 V
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Overview
The STGE200NB60S is an N-channel Insulated Gate Bipolar Transistor (IGBT) module from the PowerMESH™ family, manufactured by STMicroelectronics. It features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 150 A. The device utilizes a patented strip layout technology to achieve low on-state voltage drop characteristics. The 'S' suffix indicates optimization for very low VCE(sat) at maximum frequencies up to 1 kHz. This component is designed for high-efficiency power switching applications requiring robust performance.
Feature Summary
- High input impedance enabling voltage-driven operation
- Low on-state voltage drop (Vcesat) optimized for low-frequency conditions
- High current capability with tail current included in off-losses
- Low gate charge for efficient switching control
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Switched-mode power supplies (SMPS)
Procurement Notes
Verify the specific datasheet revision and ordering code when sourcing. Confirm thermal interface material requirements and mounting torque specifications for the module package. Ensure compatibility with gate driver circuits regarding voltage levels and current drive capabilities. Check for any regional compliance certifications required for the target market.
Selection Notes
Select this component for applications requiring high current handling at 600 V with minimized conduction losses. Consider the switching frequency limitations associated with the 'S' series optimization. Evaluate thermal management solutions based on the 150 A continuous current rating. Compare total system efficiency against alternative IGBT families if higher switching frequencies are necessary.
Part Context
This part belongs to the PowerMESH™ IGBT family, which employs advanced high-voltage technology based on a patented strip layout. The PowerMESH™ series is designed to offer outstanding performance metrics, particularly in reducing on-state voltage drops. The STGE200NB60S represents a high-current variant within this lineup, targeting demanding industrial power electronics applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official STMicroelectronics replacement guides or distributor cross-reference tools for compatible alternatives.
