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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 40A TO-220FP
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 20A
- Power - Max：37 W
- Switching Energy：209µJ (on), 261µJ (off)
- Input Type：Standard
- Gate Charge：115 nC
- Td (on/off) @ 25°C：42.5ns/177ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：90 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FP
- Grade：-
- Qualification：-
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Overview
The STGF20H60DF is a high-speed trench gate field-stop Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 20 A at 25 °C. The device supports a maximum junction temperature of 175 °C and includes an integrated ultrafast soft recovery antiparallel diode. Designed for efficiency in high-frequency converters, it exhibits a slightly positive VCE(sat) temperature coefficient and tight parameter distribution to facilitate safe paralleling operations.
Feature Summary
- Advanced proprietary trench gate field-stop structure for optimized conduction and switching loss balance
- Integrated ultrafast soft recovery antiparallel diode for efficient commutation
- Slightly positive VCE(sat) temperature coefficient enabling safer parallel operation
- Short-circuit rated capability with low thermal resistance
Applications
- High switching frequency converters
- AC-DC inverters for motor control
- Induction motor drives
- PMSM motor drives
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure the component matches the required electrical ratings for the target application circuit. Cross-reference the part number with authorized distributors to confirm current production status and availability. Check for any recent design changes or obsolescence notices from STMicroelectronics before finalizing procurement.
Selection Notes
Select this IGBT for applications requiring high switching frequencies where efficiency is critical. The tight parameter distribution makes it suitable for designs requiring multiple devices in parallel. Consider the 600 V rating and 20 A current capacity when sizing the power stage. Verify that the driver circuit can handle the switching characteristics and that the thermal management system supports the specified power dissipation at the operating junction temperature.
Part Context
The STGF20H60DF belongs to STMicroelectronics' H series of IGBTs, which are engineered to maximize converter efficiency through an optimal compromise between conduction and switching losses. This series utilizes advanced trench gate field-stop technology. The device is designed for robust performance in demanding power electronics applications, offering reliability through short-circuit rating and safe paralleling capabilities.
Replacement Considerations
Compatible alternatives within the same family include the STGP20H60DF. Verify pinout compatibility and electrical parameter equivalence before substitution. Consult the official datasheet for detailed comparison of thermal and switching characteristics to ensure seamless integration into existing designs.
