STGF20M65DF2

Overview

The STGF20M65DF2 is a trench gate field-stop IGBT from the M series, rated at 650 V and 20 A. It features a typical collector-emitter saturation voltage of 1.55 V at 20 A and supports a maximum junction temperature of 175 °C. The device offers a minimum short-circuit withstand time of 6 µs and includes a soft, fast-recovery antiparallel diode with a forward voltage of 1.85 V at 20 A. Thermal resistance from junction to case is 4.6 °C/W for the IGBT and 6.25 °C/W for the diode. Total switching energy is 0.7 mJ at 20 A and 175 °C.

Feature Summary

• Advanced proprietary trench gate field-stop structure for optimal inverter performance
• Positive VCE(sat) temperature coefficient enabling safer paralleling operation
• Tight parameter distribution across units
• Soft and very fast recovery antiparallel diode

Applications

• Motor control
• UPS
• PFC
• General-purpose inverters

Procurement Notes

Verify the specific datasheet revision (DS11363 Rev 4) against current manufacturer releases before finalizing designs. Confirm that the TO-220FP package configuration matches the intended PCB footprint and thermal management requirements. Ensure that the ordering code corresponds exactly to the required electrical ratings and packaging specifications.

Selection Notes

Select this component when high short-circuit robustness and low conduction losses are critical. The positive temperature coefficient of VCE(sat) facilitates parallel connection without active current balancing. Verify that the operating junction temperature remains within the -55 to 175 °C range and that the thermal resistance limits are respected under maximum load conditions.

Part Context

This device belongs to the STMicroelectronics M series IGBT family, which emphasizes a balance between system efficiency and reliability. The trench gate field-stop technology distinguishes it from standard planar devices by reducing on-state voltage drop while maintaining high blocking capability. It is designed for applications requiring robust fault handling and efficient power conversion.

Replacement Considerations

STGB20M65DF2: D2PAK package variant with identical electrical characteristics. STG20M65F2D7: D7 packing option for automated assembly. STGWA50M65DF2: Higher current rating in a different package. Verify pinout compatibility and thermal interface requirements when substituting.

FAQ

What is the minimum short-circuit withstand time?

The device guarantees a minimum short-circuit withstand time of 6 µs at VCC = 400 V, VGE = 15 V, and TJstart = 150 °C.

How does the VCE(sat) behave with temperature?

The device exhibits a positive VCE(sat) temperature coefficient, which increases from 1.55 V at 25 °C to 2.1 V at 175 °C at IC = 20 A.

What is the insulation withstand voltage?

The insulation withstand voltage is 2.5 kV RMS from all three leads to the external heat sink for t = 1 s at TC = 25 °C.