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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 50A TO-220FP
- Series：-
- Mfr：STMicroelectronics
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 30A
- Power - Max：50 W
- Switching Energy：270µJ (on), 310µJ (off)
- Input Type：Standard
- Gate Charge：90 nC
- Td (on/off) @ 25°C：18.4ns/71ns
- Test Condition：400V, 30A, 6.8Ohm, 15V
- Reverse Recovery Time (trr)：115 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FP
- Grade：-
- Qualification：-
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Overview
The STGF30H65DFB2 is a trench gate field-stop IGBT from the HB2 series, rated at 650 V and 30 A in a TO-220FP package. It features a maximum junction temperature of 175 °C and a typical collector-emitter saturation voltage of 1.65 V at 30 A. The device integrates a very fast soft recovery antiparallel diode to minimize tail current and switching energy. These characteristics optimize conduction at low currents and enhance efficiency for high-speed applications.
Feature Summary
- Advanced proprietary trench gate field-stop structure for optimized performance
- Integrated very fast soft recovery antiparallel diode with minimized tail current
- Positive VCE(sat) temperature coefficient enabling safer paralleling operation
Applications
- High-efficiency frequency converters
- Fast switching power supply topologies
- Industrial motor drives requiring high speed
Procurement Notes
Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Request original manufacturer datasheets and product change notifications to confirm technical specifications. Ensure compliance with RoHS directives and check for specific automotive or industrial qualification requirements relevant to the target application environment.
Selection Notes
Select this component when designing circuits requiring high-speed switching combined with low conduction losses at moderate currents. The integrated fast diode makes it suitable for half-bridge configurations where reverse recovery characteristics are critical. Consider thermal management solutions compatible with the TO-220FP package for optimal heat dissipation during continuous operation.
Part Context
This device belongs to the HB2 series, representing an evolution of STMicroelectronics' trench gate field-stop technology. It succeeds earlier HB series models by offering improved VCE(sat) behavior at low currents and reduced switching energy. The part is designed to maximize efficiency across a wide range of fast applications compared to previous generations.
Replacement Considerations
Direct replacements within the same family include STGF30H60DFB2 (600V variant). Verify pinout compatibility and thermal resistance differences when substituting with other TO-220FP IGBTs. Cross-reference switching times and diode recovery characteristics to ensure circuit stability.
