STGF30M65DF2

Overview

The STGF30M65DF2 is a single N-channel IGBT from the M series, utilizing trench gate field-stop technology. It features a 650 V collector-emax voltage and a continuous collector current of 60 A at 25 °C. The device operates within a temperature range of -55 °C to +175 °C. Key electrical parameters include a maximum gate-emitter voltage of ±20 V and a power dissipation of 38 W. Packaged in TO-220FP, it is designed for high-efficiency switching applications.

Feature Summary

• Advanced proprietary trench gate field-stop structure for low conduction losses
• Automotive-grade reliability with AEC-Q101 qualification
• High thermal performance suitable for demanding power environments

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• High-frequency welding equipment

Procurement Notes

Verify the specific ordering suffix to ensure correct packaging configuration. Confirm that the requested variant matches the required package type and lead-free status. Cross-reference the manufacturer part number against official distribution channels to avoid counterfeit components. Ensure compliance with RoHS directives if applicable to your manufacturing process.

Selection Notes

Select this component when a 650 V rating and 60 A continuous current capability are required in a through-hole package. Consider the TO-220FP form factor for ease of mounting on heatsinks. Evaluate the trade-off between saturation voltage and switching speed relative to the specific application's efficiency targets.

Part Context

This device belongs to STMicroelectronics' M series IGBT lineup, which emphasizes low loss and robust performance. It complements other variants like the STGWA30M65DF2AG by offering different current ratings and package options within the same technological family.

Replacement Considerations

Direct substitutes may include STGB30M65DF2 or STGW30M65DF2, depending on package requirements. Verify pin compatibility and thermal characteristics before substitution.