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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 8A TO-220FP
- Series：M
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：8:00 AM
- Current - Collector Pulsed (Icm)：16 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 4A
- Power - Max：23 W
- Switching Energy：40µJ (on), 136µJ (off)
- Input Type：Standard
- Gate Charge：15.2 nC
- Td (on/off) @ 25°C：12ns/86ns
- Test Condition：400V, 4A, 47Ohm, 15V
- Reverse Recovery Time (trr)：133 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FP
- Grade：-
- Qualification：-
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Overview
The STGF4M65DF2 is a single IGBT from the M series, utilizing trench gate field-stop technology. It features a 650 V collector-emitter voltage rating and a continuous collector current of 10 A at 25 °C. The device operates with a maximum junction temperature of 175 °C and offers a typical saturation voltage of 1.6 V at 10 A. Packaged in TO-220FP-3 for through-hole mounting, it provides low thermal resistance and soft fast-recovery antiparallel diode characteristics.
Feature Summary
- Trench gate field-stop structure for optimized switching performance
- Positive VCE(sat) temperature coefficient for safer paralleling
- Soft and very fast recovery antiparallel diode
- Low thermal resistance design
Applications
- Motor control systems
- Uninterruptible power supplies (UPS)
- Power factor correction (PFC) circuits
- General purpose inverters
Procurement Notes
Verify the specific ordering suffix to ensure correct packaging configuration, as tube quantities may vary by region. Confirm RoHS compliance status directly with the manufacturer or authorized distributor before finalizing procurement orders. Check for any recent product change notifications that might affect lead times or component specifications.
Selection Notes
Select this component when a 650 V blocking capability and 10 A continuous current are required in a through-hole package. The positive temperature coefficient facilitates parallel operation without active current sharing. Ensure the application can accommodate the specified short-circuit withstand time and thermal management requirements for reliable long-term operation.
Part Context
This part belongs to the M series of IGBTs developed by STMicroelectronics. The series emphasizes an optimal balance between inverter system performance and efficiency. It shares core technological features with other M series devices, such as the STGB10M65DF2 and STGP4M65DF2, differing primarily in current ratings and package types.
Replacement Considerations
Direct replacements within the same series include STGP4M65DF2 (TO-220 package) or STGB10M65DF2 (D2PAK package). Verify pinout compatibility and thermal resistance differences when substituting packages. Cross-reference datasheets to confirm identical switching characteristics and short-circuit withstand times.
