STGF6NC60HD

STGF6NC60HD

$1.53
  • Description:IGBT 600V 6A TO-220FP
  • Series:PowerMESH™

SKU:86ce3f3a3f5a Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 600V 6A TO-220FP
  • Series:PowerMESH™
  • Mfr:STMicroelectronics
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):6:00 AM
  • Current - Collector Pulsed (Icm):21 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 3A
  • Power - Max:20 W
  • Switching Energy:20µJ (on), 68µJ (off)
  • Input Type:Standard
  • Gate Charge:13.6 nC
  • Td (on/off) @ 25°C:12ns/76ns
  • Test Condition:390V, 3A, 10Ohm, 15V
  • Reverse Recovery Time (trr):21 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220FP
  • Grade:-
  • Qualification:-

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STGF6NC60HD

Overview

The STGF6NC60HD is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the PowerMESH™ family, designed for high-frequency applications. It features a 600 V collector-emitter voltage rating and a continuous collector current of 7 A at 25 °C. The device utilizes advanced trench-gate technology to achieve low on-state voltage drop while maintaining very fast switching performance with reduced fall time. It operates within a junction temperature range of -55 °C to +150 °C and is available in TO-220AB and TO-220FP packages.

Feature Summary

  • Optimized for high-frequency operation through reduced fall time while maintaining low voltage drop
  • Features a very soft ultra-fast recovery antiparallel diode
  • Low CRES/CIES ratio prevents cross-conduction susceptibility

Applications

  • Switching Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • Hard-switched and resonant topologies

Procurement Notes

Verify the specific package variant required, as the part number corresponds to both TO-220AB and TO-220FP configurations. Confirm RoHS compliance status and check for any recent Product Change Notifications (PCN) regarding manufacturing site changes or material updates before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high switching frequencies with minimal conduction losses. Ensure the thermal management solution supports the specified power dissipation limits. Verify that the gate drive circuitry accommodates the ±20 V maximum gate-emitter voltage rating to prevent device damage during operation.

Part Context

This IGBT belongs to the STMicroelectronics PowerMESH™ series, which employs patented strip layout technology. The 'H' suffix identifies devices optimized for high-frequency applications, balancing low saturation voltage with rapid switching characteristics compared to standard IGBTs in the same voltage class.

Replacement Considerations

Direct substitutes include other members of the PowerMESH™ 600 V family such as STGP6NC60HD or STGB6NC60HDT4, provided the package type and current ratings match the design requirements. Cross-reference datasheets for exact thermal resistance and switching time parameters.

STGF6NC60HDSTGF6NC60HD
$1.53
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