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Product Detailed Parameters
- Description：IGBT 600V 10A TO-220FP
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：10:00 AM
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 7A
- Power - Max：25 W
- Switching Energy：95µJ (on), 115µJ (off)
- Input Type：Standard
- Gate Charge：35 nC
- Td (on/off) @ 25°C：18.5ns/72ns
- Test Condition：390V, 7A, 10Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FP
- Grade：-
- Qualification：-
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Overview
The STGF7NC60HD is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 10 A at 25°C. The device utilizes PowerMESH technology for optimized performance. It is housed in a TO-220FP package with three pins, designed for through-hole mounting. The component operates within a temperature range from -55°C to +150°C, with a maximum gate-emitter voltage of ±20 V.
Feature Summary
- PowerMESH technology ensures an excellent trade-off between switching performance and low on-state behavior.
- Optimized for high-frequency applications with reduced fall time while maintaining low voltage drop.
- Features a very soft ultra-fast recovery antiparallel diode.
- Low CRES/CIES ratio eliminates cross-conduction susceptibility.
Applications
- High-frequency power conversion circuits
- Motor control systems requiring fast switching
- Industrial power supplies
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal characteristics. Ensure the procurement channel provides authentic components with traceable documentation. Cross-reference the RoHS compliance status with current regulatory requirements before integration into final assemblies.
Selection Notes
Select this component when a balance of low conduction loss and high-speed switching is required in a through-hole package. Compare the 10 A current rating against peak load demands. Consider the TO-220FP thermal resistance for heatsinking design. Evaluate the 600 V breakdown voltage against system bus voltages to ensure adequate safety margins.
Part Context
This IGBT belongs to the PowerMESH family, which employs advanced trench-gate field-stop technology. The 'H' suffix indicates optimization for high-frequency operation, specifically targeting reduced tail current and faster turn-off times compared to standard variants within the same voltage class.
FAQ
What technology does the STGF7NC60HD use?
It uses STMicroelectronics' advanced PowerMESH technology, which combines trench gate and field stop structures.
Is the STGF7NC60HD suitable for high-frequency applications?
Yes, the 'H' suffix denotes that it is optimized for high-frequency applications with reduced fall time.
What is the maximum operating junction temperature?
The maximum operating temperature is +150°C.
