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The STGFW20H65FB is a single IGBT from the HB2 series, utilizing Trench Gate Field-Stop technology. It features a collector-emitter voltage (VCEO) of 650 V and a continuous collector current (IC) of 40 A at 25°C. The device has a maximum power dissipation (Pd) of 137 W and an on-state saturation voltage (VCEsat) of 1.8 V. It operates within a temperature range of -55°C to +175°C and is housed in a TO-247 package.
Verify the specific datasheet revision and ordering suffixes directly with STMicroelectronics or authorized distributors. Confirm RoHS compliance status and ensure the component matches the exact pinout and electrical specifications required for your circuit design before finalizing procurement.
Select this component for designs requiring robust 650 V blocking capability and moderate current handling up to 40 A. Consider the TO-247 package for through-hole mounting and adequate heat sinking. Evaluate the trade-off between the 1.8 V saturation voltage and switching losses against alternative devices in the same voltage class.
This part belongs to the HB2 series of IGBTs from STMicroelectronics. The series is characterized by Trench Gate Field-Stop technology, designed to offer improved switching performance and lower conduction losses compared to previous generations, making it suitable for efficient power conversion systems.
Check for direct replacements such as the STGWA50HP65FB2 or other HB2 series variants with similar voltage and current ratings. Ensure any substitute maintains the TO-247 footprint and comparable thermal characteristics.