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The STGI25N36LZAG is an automotive-grade N-channel Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics, designed for high-reliability applications. It features a maximum collector-emitter voltage of 360 V and a continuous collector current of 25 A at 25 °C. The device utilizes advanced PowerMESH technology to achieve very low saturation voltage and high short-circuit withstand capability. Key electrical parameters include a maximum gate-emitter voltage of ±16 V, a power dissipation of 150 W, and an operating temperature range from -55 °C to +175 °C. It is housed in a D2PAK package and complies with the AEC-Q101 qualification standard.
Verify the exact part number against official manufacturer documentation before procurement. Confirm that the suffix 'ZAG' corresponds to the specified tape and reel packaging and Ecopack1 compliance. Ensure the component meets the required AEC-Q101 grade for your specific automotive application context.
Select this IGBT when designing circuits requiring robust short-circuit protection and low on-state losses in automotive environments. Consider the 360 V rating and 25 A current capacity relative to your load requirements. Verify that the logic-level gate drive compatibility matches your controller output specifications.
This component belongs to STMicroelectronics' automotive-grade IGBT portfolio optimized for coil driving. It shares design characteristics with other members of the STGB/STGI series, utilizing similar PowerMESH technology for enhanced performance in ignition systems.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official STMicroelectronics documentation or authorized distributors for verified cross-reference data.