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Product Detailed Parameters
- Description：IGBT 330V 90A TO-220
- Series：STripFET™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：330 V
- Current - Collector (Ic) (Max)：90 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 50A
- Power - Max：250 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-/134ns
- Test Condition：180V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP100N30 is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 100 A at 25°C, with a reduced rating of 75 A at 100°C. The device utilizes Field-Stop Trench technology to achieve low saturation voltage and fast switching speeds. It is housed in an isolated TO-247 package designed for flange mounting, supporting a maximum power dissipation of 800 W. The component operates within a junction temperature range of -40°C to +175°C.
Feature Summary
- Field-Stop Trench technology for optimized trade-off between conduction losses and switching performance
- High short-circuit capability providing robust protection against fault conditions
- Low saturation voltage reducing thermal stress during high-current operation
- Fast reverse recovery body diode suitable for hard-switching applications
Applications
- Motor drives and inverters for industrial automation
- Switched-mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific ordering suffix to confirm package type and RoHS compliance status. Ensure the supplier provides original manufacturer documentation or traceable certificates of conformity. Cross-reference the part number with official STMicroelectronics databases to validate authenticity before purchase.
Selection Notes
Select this component when designing circuits requiring high current handling above 90 A and voltage ratings up to 600 V. Consider the thermal resistance characteristics of the TO-247 package for heatsink design. Evaluate the gate charge requirements against the driving circuit capabilities to ensure optimal switching speed and efficiency.
Part Context
This IGBT belongs to the Superjunction family from STMicroelectronics, engineered for medium-power applications. It complements other devices in the same series offering varying current and voltage ratings. The technology focuses on minimizing energy loss in power conversion systems while maintaining reliability under harsh electrical conditions.
Replacement Considerations
Direct substitutes include the STGP100N60FD for higher voltage applications or the STGW100N60HDF6 for enhanced ruggedness. Verify pin compatibility and thermal parameters when considering alternatives from other manufacturers such as Infineon or Mitsubishi.
