STGP10NB60SFP

Overview

The STGP10NB60SFP is a 600 V, 16 A low-drop IGBT utilizing the PowerMESH™ process for optimized on-state voltage drop in low-frequency applications up to 1 kHz. It features a TO-220-FP package with an isolation withstand voltage of 2500 V RMS. Key electrical ratings include a continuous collector current of 23 A at 25 °C and a maximum junction temperature of 150 °C. The device exhibits a typical VCE(sat) of 1.35 V at 10 A and 15 V gate drive. Switching characteristics under standard test conditions (VCC=480 V, IC=10 A) show turn-on energy of 0.6 µJ and turn-off energy of 5 µJ.

Feature Summary

• Advanced PowerMESH™ technology providing extremely low on-state voltage drop for low-frequency operation.
• High current capability with robust thermal performance in a leaded surface-mount compatible package.
• Integrated isolation withstand voltage ensuring safety between leads and external heat sink.

Applications

• Light dimmers
• Static relays
• Motor drives

Procurement Notes

Verify component status before procurement as this specific part number is listed as obsolete by the manufacturer. Confirm availability through authorized distributors or secondary markets if immediate replacement is required. Ensure that any substitute components meet the original electrical specifications and package dimensions to maintain system compatibility without redesign.

Selection Notes

Select this component for low-frequency switching applications where minimizing conduction losses is critical. The TO-220-FP package offers a balance of thermal dissipation and mounting flexibility. Designers should account for the specific thermal resistance values when calculating heatsink requirements to ensure the junction temperature remains within the specified operating range during continuous operation.

Part Context

This IGBT belongs to the STGP10NB60 series, designed for general-purpose power switching. The 'FP' suffix indicates the specific TO-220-FP flat-pack variant, which differs from standard through-hole packages in mechanical footprint but maintains similar electrical characteristics. It is part of STMicroelectronics' portfolio of high-voltage power semiconductors aimed at industrial and consumer electronics markets.

Replacement Considerations

STGP10NB60SD

FAQ

What is the maximum isolation withstand voltage?

The device provides an isolation withstand voltage of 2500 V RMS from all three leads to the external heat sink for a duration of 1 second at 25 °C.

How does the PowerMESH™ process benefit this IGBT?

The PowerMESH™ process optimizes the cell structure to achieve an extremely low on-state voltage drop (VCE(sat)), particularly beneficial in low-frequency working conditions up to 1 kHz.

What are the switching loss values under standard test conditions?

At VCC = 480 V, IC = 10 A, and RG = 1 kΩ, the typical turn-on switching loss (Eon) is 0.6 µJ and the typical turn-off switching loss (Eoff) is 5 µJ.