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Product Detailed Parameters
- Description：IGBT 600V 20A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 5A
- Power - Max：60 W
- Switching Energy：31.8µJ (on), 95µJ (off)
- Input Type：Standard
- Gate Charge：19.2 nC
- Td (on/off) @ 25°C：14.2ns/72ns
- Test Condition：390V, 5A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP10NC60H is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes the PowerMESH™ process to balance switching performance and on-state behavior. The device features a collector-emitter breakdown voltage of 600 V and a continuous collector current of 20 A at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.9 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capability of 56 W. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-220-3 through-hole package.
Feature Summary
- PowerMESH™ technology for optimized trade-off between low on-voltage drop and switching performance
- Very soft ultra-fast recovery antiparallel diode integrated with the IGBT
- Low CRES/CIES ratio to prevent cross-conduction susceptibility
Applications
- High-frequency operation up to 50 kHz
- Resonant or soft-switching applications
- General purpose inverters and converters
Procurement Notes
Verify the specific suffix 'HD' versus 'H' when sourcing, as datasheets often list STGP10NC60HD. Confirm RoHS compliance status and ensure the TO-220-3 package matches the thermal requirements of the target design. Check for active status as product lines may transition to obsolete.
Selection Notes
Select this component for designs requiring a 600 V rating with moderate current handling up to 20 A. The low saturation voltage makes it suitable for efficiency-critical applications. Ensure the driving circuit can handle the specified gate voltage limits and that the thermal management system supports the 56 W dissipation rating.
Part Context
This part belongs to the STGP10NC series of PowerMESH™ IGBTs from STMicroelectronics. It shares architectural similarities with other models in the family but is distinguished by its specific voltage and current ratings. The PowerMESH™ process is a proprietary trench gate technology designed to reduce conduction losses while maintaining fast switching speeds.
Replacement Considerations
STGP10NC60HD is the explicitly documented variant with identical specifications. Other 600 V, 10A/20A IGBTs in the TO-220-3 package from the same manufacturer may serve as functional substitutes if pinouts and electrical characteristics align.
