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Product Detailed Parameters
- Description：IGBT 600V 30A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 12A
- Power - Max：125 W
- Switching Energy：258µJ (off)
- Input Type：Standard
- Gate Charge：54 nC
- Td (on/off) @ 25°C：25ns/96ns
- Test Condition：480V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr)：80 ns
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP12NB60KD is a single N-channel PowerMESH™ IGBT from STMicroelectronics, rated for 600V collector-emitter voltage and 18A continuous collector current at 100°C. It features a maximum saturation voltage of 2.8V at 15V gate drive and 12A collector current. The device includes a co-packaged antiparallel diode with a forward current rating of 12A. Designed for high-frequency applications up to 50kHz, it offers short-circuit withstand capability of 10µs. Thermal resistance from junction to case is 1.0°C/W, supporting operation up to a maximum junction temperature of 150°C.
Feature Summary
- PowerMESH™ technology optimized for high-frequency switching performance up to 50kHz
- Short-circuit proof design with typical withstand time of 10 microseconds
- Co-packaged antiparallel diode for improved power dissipation and thermal management
Applications
- High frequency motor controls
- Switched-mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific package variant required for the application. The STGP suffix indicates a TO-220 tube package, while the STGB suffix denotes a D2PAK tape and reel configuration. Confirm that the ordering suffix matches the intended mechanical form factor before procurement to ensure compatibility with existing board layouts and assembly processes.
Selection Notes
Select this component for designs requiring robust short-circuit protection and high switching frequencies up to 50kHz. Ensure the gate drive circuit can supply the necessary charge within the specified timing constraints. Verify thermal management capabilities against the 1.0°C/W junction-to-case resistance to maintain safe operating temperatures under peak load conditions.
Part Context
This part belongs to the STPOWER PowerMESH™ family of insulated-gate bipolar transistors. The 'K' suffix specifically identifies devices optimized for high-frequency applications, distinguishing them from standard variants by offering reduced fall times while maintaining low on-state voltage drops suitable for demanding industrial and consumer electronics environments.
Replacement Considerations
The datasheet does not list official direct replacements. Designers should evaluate other 600V, 18A IGBTs with similar short-circuit ratings and switching characteristics if substitution is necessary.
