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Product Detailed Parameters
- Description：IGBT 600V 25A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：25 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 7A
- Power - Max：80 W
- Switching Energy：82µJ (on), 155µJ (off)
- Input Type：Standard
- Gate Charge：34.4 nC
- Td (on/off) @ 25°C：22.5ns/116ns
- Test Condition：390V, 7A, 10Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP14NC60KD is a 14 A, 600 V short-circuit rugged IGBT developed using advanced PowerMESH technology. It offers an excellent trade-off between switching performance and low on-state behavior, making it suitable for resonant or soft-switching applications. Key electrical ratings include a collector-emitter voltage of 600 V, continuous collector current of 14 A at 25°C case temperature, and a short-circuit withstand time of 10 μs. The device features a very soft ultra-fast recovery antiparallel diode and a low C_res / C_ies ratio to prevent cross-conduction susceptibility.
Feature Summary
- Short circuit withstand time of 10 μs
- Low C_res / C_ies ratio preventing cross-conduction susceptibility
- Low on-voltage drop (V_CE(sat))
- Very soft ultra-fast recovery antiparallel diode
Applications
- High frequency inverters
- SMPS and PFC in both hard switch and resonant topologies
- Motor drives
Procurement Notes
Verify the specific ordering suffix to confirm the package type, as the STGP14NC60KD designation may correspond to different physical packages such as TO-220FP or D²PAK depending on the full part number variant. Confirm the product status is active before procurement. Ensure the supplier provides official datasheets matching the exact suffix to guarantee correct pinout and thermal characteristics.
Selection Notes
Select this component for applications requiring high switching frequencies and robust short-circuit protection. The PowerMESH technology ensures low conduction losses while maintaining fast switching speeds. Consider the thermal management requirements based on the specific package variant selected, as power dissipation capabilities vary between TO-220FP and other available packages.
Part Context
This IGBT belongs to STMicroelectronics' short-circuit rugged 'K' series, designed for high reliability in demanding power electronics environments. It shares core technological features with similar models like the STGB14NC60KDT4 and STGF14NC60KD, differing primarily in packaging and specific electrical parameter tolerances defined by their respective suffixes.
Replacement Considerations
Direct replacements within the same family include STGB14NC60KDT4 and STGF14NC60KD. Verify that the substitute part matches the required package type and thermal resistance specifications. Ensure the replacement maintains the 10 μs short-circuit withstand capability and compatible gate drive requirements.
