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The STGP19NC60SD is a single IGBT from the PowerMESH™ series, rated at 600 V collector-emitter voltage and 40 A continuous collector current. It features a maximum on-state voltage drop of 1.9 V at 15 V gate drive and 12 A collector current. The device operates within a junction temperature range of -55°C to 150°C and dissipates up to 130 W. Switching characteristics include a turn-on energy of 135 µJ and turn-off energy of 815 µJ under test conditions of 480 V, 12 A, 10 Ω gate resistance, and 15 V gate voltage. Gate charge is specified at 54.5 nC.
Verify component authenticity by cross-referencing the manufacturer part number STGP19NC60SD with official STMicroelectronics documentation. Confirm RoHS3 compliance and check for recent production change notices regarding assembly sites or material composition updates prior to integration into final designs.
Select this component for medium-frequency applications requiring low conduction losses and fast switching. Ensure thermal management supports the 130 W power dissipation limit. Verify that the required gate drive voltage aligns with the 15 V specification for optimal Vce(sat) performance.
This device belongs to the STGP19NC60 family, which includes variants like STGB19NC60HDT4 and STGW19NC60HD. These parts share similar electrical ratings but differ in packaging options such as TO-220, D²PAK, and TO-247, allowing designers to choose based on thermal and spatial constraints.
Direct substitutes within the same series include STGB19NC60HDT4 and STGW19NC60HD. Verify package compatibility (TO-220 vs. D²PAK/TO-247) and ensure pinout alignment before substitution.