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Product Detailed Parameters
- Description：IGBT 600V 40A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 12A
- Power - Max：130 W
- Switching Energy：81µJ (on), 125µJ (off)
- Input Type：Standard
- Gate Charge：53 nC
- Td (on/off) @ 25°C：25ns/90ns
- Test Condition：390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP19NC60W is a 600 V, 19 A N-channel IGBT utilizing the PowerMESH™ process. It features an ultra-fast recovery antiparallel diode and operates within a junction temperature range of -65 °C to +150 °C. The device provides a collector-emitter saturation voltage (VCE(sat)) of 2.1 V at 12 A and 15 V gate drive. Key electrical ratings include a continuous collector current of 42 A at 25 °C case temperature and a total power dissipation of 130 W. Thermal resistance from junction to case is 0.9 °C/W.
Feature Summary
- Advanced PowerMESH™ technology for optimized switching performance and low on-state behavior
- Low CRES/CIES ratio to prevent cross-conduction susceptibility in high-frequency applications
- Co-packaged ultra-fast freewheeling diode with soft recovery characteristics
Applications
- High frequency motor controls and inverters
- Uninterruptible power supplies (UPS)
- Hard switch and resonant topology SMPS and PFC circuits
Procurement Notes
Verify the specific ordering code against the manufacturer's official documentation to ensure correct package selection. Confirm that the component meets all required environmental standards and lead-free specifications before finalizing procurement plans.
Selection Notes
Select this component for designs requiring high-frequency operation where minimizing cross-conduction risks is critical. Ensure thermal management solutions can handle the specified junction-to-case thermal resistance and maximum power dissipation limits under expected operating conditions.
Part Context
This part belongs to the STGB19NC60W / STGP19NC60W / STGW19NC60W family, differentiated primarily by packaging. The STGP variant utilizes a TO-220 tube package, while other family members offer D2PAK or TO-247 options. All variants share identical electrical characteristics and internal schematic configurations.
Replacement Considerations
Direct substitutes within the same series include STGB19NC60WT4 and STGW19NC60W. Verify pinout compatibility and thermal interface requirements when transitioning between different package types within this product family.
FAQ
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage (V(BR)CES) is 600 V.
How does the device mitigate cross-conduction susceptibility?
The IGBT features a low CRES/CIES ratio, which eliminates susceptibility to cross-conduction during high-frequency switching operations.
What is the typical turn-on switching loss value?
At VCC = 390 V, IC = 12 A, RG = 10 Ω, and VGE = 15 V, the typical turn-on switching loss (Eon) is 81 µJ.
