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Product Detailed Parameters
- Description：IGBT 600V 40A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 12A
- Power - Max：125 W
- Switching Energy：81µJ (on), 125µJ (off)
- Input Type：Standard
- Gate Charge：53 nC
- Td (on/off) @ 25°C：25ns/90ns
- Test Condition：390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr)：31 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP19NC60WD is an N-channel ultra-fast PowerMESH IGBT with a 600V collector-emitter voltage rating and a TO-220 package. It features a maximum continuous collector current of 40A at 25°C and 22A at 100°C, with a saturation voltage below 2.5V at 12A. The device integrates a co-packaged ultrafast freewheeling diode with a reverse recovery time of 31ns at 25°C. Total switching losses reach 206µJ under standard test conditions. Thermal resistance from junction to case is 1.0°C/W, supporting operation up to a 150°C junction temperature.
Feature Summary
- Utilizes advanced PowerMESH technology for optimized trade-off between low on-state behavior and switching performance
- Features a very soft ultra-fast recovery antiparallel diode suitable for high-frequency applications
- Low CRES/CIES ratio eliminates susceptibility to cross-conduction in bridge configurations
Applications
- High frequency motor controls and inverters
- Uninterruptible power supplies (UPS)
- Hard switch and resonant topology SMPS and PFC circuits
Procurement Notes
Verify the specific ordering code against the manufacturer's official documentation to ensure correct package type and suffix designation. Confirm RoHS compliance status and environmental declarations prior to integration. Cross-reference absolute maximum ratings with system operating limits to prevent thermal or electrical overstress during procurement validation.
Selection Notes
Select this component for designs requiring high-frequency operation where low cross-conduction risk is critical. Evaluate the integrated diode characteristics alongside the IGBT switching speeds to optimize snubber requirements. Ensure adequate heatsinking to maintain junction temperatures within the specified range given the total power dissipation capabilities.
Part Context
This part belongs to the PowerMESH family of IGBTs developed using patented strip layout technology. The 'W' suffix identifies devices optimized for very high-frequency applications. This specific model represents the TO-220 variant within the broader 600V, 19A class designed for efficient power conversion.
Replacement Considerations
STGW19NC60WD serves as a direct functional equivalent utilizing the same die but housed in a TO-247 package. Verify mechanical footprint compatibility when substituting between these two package types.
