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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 40A TO-220
- Series：HB2
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 20A
- Power - Max：147 W
- Switching Energy：265µJ (on), 214µJ (off)
- Input Type：Standard
- Gate Charge：56 nC
- Td (on/off) @ 25°C：16ns/78.8ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP20H65FB2 is a high-speed N-channel IGBT from the HB2 series, utilizing an advanced trench gate field-stop structure. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 20 A at 25°C. The device operates with a maximum junction temperature of 175°C and offers low saturation voltage (Vce(sat)) of 1.65 V typical at 20 A. It includes a co-packaged fast soft-recovery antiparallel diode, minimized tail current, and tight parameter distribution for safe paralleling.
Feature Summary
- Advanced trench gate field-stop technology optimized for conduction and switching efficiency
- Co-packaged very fast and soft recovery antiparallel diode
- Positive Vce(sat) temperature coefficient enabling safer parallel operation
- Minimized tail current and tight parameter distribution
Applications
- High-frequency power converters
- Fast switching applications requiring high efficiency
- Industrial motor drives
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific suffix FB2 against official datasheets to confirm pinout and thermal characteristics. Ensure compatibility with existing PCB footprints for TO-247 packages. Check for RoHS compliance status in the latest manufacturer documentation before finalizing procurement plans.
Selection Notes
Select this component when designing circuits requiring high switching speeds and low conduction losses at 650 V. The HB2 series is suitable for applications demanding improved efficiency through reduced switching energy. Consider the positive temperature coefficient for parallel configurations to ensure balanced current sharing.
Part Context
This part belongs to STMicroelectronics' HB2 series of IGBTs, representing an evolution of their proprietary trench gate field-stop technology. The series focuses on maximizing efficiency for fast applications by optimizing Vce(sat) behavior at low currents and reducing switching energy compared to previous generations.
Replacement Considerations
Direct replacements within the same family include STGF20H65DFB2 (TO-220FP package) or STGB20H65FB2 (D2PAK package). Verify package dimensions and thermal resistance differences when substituting. Cross-reference with STGWA20HP65FB2 for similar performance in TO-247 long leads.
