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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 40A TO-220
- Series：-
- Mfr：STMicroelectronics
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.05V @ 15V, 20A
- Power - Max：159 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：56 nC
- Td (on/off) @ 25°C：-
- Test Condition：400V, 20A, 22Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
Download product information
Overview
The STGP20IH65DF is an N-channel IGBT from STMicroelectronics, rated for a maximum collector-emitter voltage of 650 V and a continuous collector current of 20 A. It utilizes a trench gate field-stop structure to optimize conduction and switching losses. The device operates within a junction temperature range of -55 °C to 175 °C and features a maximum power dissipation of 108 W. Packaged in a TO-247 through-hole configuration with four pins, it supports high-frequency applications up to 1 MHz.
Feature Summary
- Advanced proprietary trench gate field-stop structure for optimized performance
- Soft and fast recovery antiparallel diode integration
- Positive VCE(sat) temperature coefficient for safe paralleling operation
Applications
- High switching frequency converters
- Resonant and soft-switching applications
- Motor control systems
Procurement Notes
Verify the specific datasheet revision and ordering code suffixes directly with STMicroelectronics or authorized distributors. Confirm that the component meets all required RoHS compliance standards and thermal management specifications for your target environment before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring a balance between low conduction and switching losses at high frequencies. Ensure the application benefits from the tight parameter distribution and positive temperature coefficient, which facilitate safer parallel operation compared to standard IGBTs without these specific characteristics.
Part Context
This part belongs to the H-series of IGBTs developed by STMicroelectronics. The series represents an optimum compromise between conduction and switching losses, designed specifically to maximize efficiency in high switching frequency converters while maintaining robust thermal performance.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs by comparing electrical parameters such as VCEO, IC, and package dimensions against alternative components.
