STGP20M65DF2

Overview

The STGP20M65DF2 is a trench gate field-stop IGBT from the M series, rated at 650 V and 20 A. It features a typical collector-emitter saturation voltage of 1.55 V at 20 A and offers a short-circuit withstand time of 6 µs. The device supports a maximum junction temperature of 175 °C and utilizes a TO-220 package for through-hole mounting.

Feature Summary

• Advanced proprietary trench gate field-stop structure for low-loss performance
• Positive VCE(sat) temperature coefficient enabling safer paralleling operation
• Soft and very fast recovery antiparallel diode
• Tight parameter distribution for consistent system behavior

Applications

• Industrial motor control
• General purpose inverters
• Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific ordering suffix to confirm the exact package variant and packing method. Confirm RoHS compliance status and check for any recent lifecycle notifications such as obsolescence or last-time buy notices before finalizing procurement plans.

Selection Notes

Select this component when a balance between inverter system performance and efficiency is required. The positive temperature coefficient facilitates parallel operation, while the 6 µs short-circuit capability provides robust protection against fault conditions in industrial applications.

Part Context

This part belongs to STMicroelectronics' M series IGBTs, which are designed for optimal balance between performance and efficiency. The series emphasizes low-loss characteristics and essential short-circuit functionality for modern power conversion systems.

Replacement Considerations

Cross-reference with other M series devices like STGB20M65DF2 or STGWA20M65DF2 for different package options. Verify pinout compatibility and thermal resistance values when substituting to ensure circuit integrity.