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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 50A TO-220
- Series：HB2
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 30A
- Power - Max：167 W
- Switching Energy：270µJ (on), 310µJ (off)
- Input Type：Standard
- Gate Charge：90 nC
- Td (on/off) @ 25°C：18.4ns/71ns
- Test Condition：400V, 30A, 6.8Ohm, 15V
- Reverse Recovery Time (trr)：115 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP30H65DFB2 is a trench gate field-stop IGBT from the HB2 series, rated at 650 V and packaged in a TO-220. It features a typical collector-emitter saturation voltage of 1.65 V at 30 A and supports a continuous collector current of 50 A at 25 °C case temperature. The device includes a co-packaged antiparallel diode with a forward voltage of 1.80 V at 30 A. Switching characteristics include turn-on energy of 270 µJ and turn-off energy of 310 µJ at 400 V and 30 A. Thermal resistance from junction to case is 0.9 °C/W for the IGBT and 1.47 °C/W for the diode.
Feature Summary
- Advanced trench gate field-stop structure optimized for conduction and switching performance
- Co-packaged very fast soft recovery diode designed to minimize tail current
- Positive VCE(sat) temperature coefficient enabling safer paralleling operation
- Tight parameter distribution and low thermal resistance
Applications
- Welding equipment
- Power factor correction circuits
- Uninterruptible power supplies (UPS)
- Solar inverters
- Battery chargers
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official records before implementation. Confirm that the TO-220 package dimensions align with the intended PCB footprint and mounting requirements. Ensure the operating junction temperature does not exceed the maximum rating of 175 °C under all expected load conditions.
Selection Notes
Select this component for applications requiring high-speed switching and low conduction losses within the 650 V range. Consider the thermal resistance values when designing heat sinks for continuous currents up to 30 A at elevated case temperatures. Evaluate the gate charge requirements to ensure the driver circuit can handle the specified switching speeds effectively.
Part Context
This part belongs to the HB2 series of IGBTs, which represent an evolution of the proprietary trench gate field-stop technology. The series focuses on maximizing efficiency through improved VCE(sat) behavior at low currents and reduced switching energy compared to previous generations.
Replacement Considerations
Check for direct pin-compatible alternatives within the same HB2 series or other STMicroelectronics 650 V IGBT families. Verify that any substitute maintains equivalent thermal resistance and switching energy characteristics to ensure system performance consistency.
