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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 60A TO-220
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 30A
- Power - Max：258 W
- Switching Energy：300µJ (on), 960µJ (off)
- Input Type：Standard
- Gate Charge：80 nC
- Td (on/off) @ 25°C：31.6ns/115ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：140 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP30M65DF2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the M series, manufactured by STMicroelectronics. It utilizes an advanced proprietary trench gate field-stop structure to achieve low conduction losses and robust short-circuit withstand capability. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 30 A at 25 °C. It operates within a junction temperature range of -55 °C to +175 °C and offers a typical saturation voltage of 1.55 V at rated current. Packaged in a TO-220 format for through-hole mounting, it provides a total power dissipation of 258 W.
Feature Summary
- Advanced trench gate field-stop structure for optimized efficiency
- Positive VCE(sat) temperature coefficient enabling safer paralleling
- Soft and very fast recovery antiparallel diode integration
Applications
- Motor control systems
- General purpose inverters
- Uninterruptible Power Supplies (UPS)
- Power Factor Correction (PFC)
Procurement Notes
Verify the specific ordering suffix against the official datasheet to ensure correct package variant and electrical characteristics. Confirm component status as obsolete or active via authorized distributors before procurement planning. Request original manufacturer documentation to validate authenticity and traceability. Ensure thermal management solutions align with the specified junction-to-case thermal resistance parameters.
Selection Notes
Select this component for applications requiring a balance between inverter system performance and efficiency. The tight parameter distribution supports reliable parallel operation in higher power designs. Evaluate the 6 µs minimum short-circuit withstand time against system fault protection requirements. Consider the positive temperature coefficient for simplified thermal management in multi-device configurations.
Part Context
This IGBT belongs to the M series, designed to provide an optimal balance between inverter system performance and efficiency. The series emphasizes low-loss operation and essential short-circuit functionality. The technology represents STMicroelectronics' proprietary trench gate field-stop development, targeting industrial and consumer power conversion needs.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and thermal resistance values if considering alternative manufacturers. Ensure replacement devices meet the same 650 V rating and short-circuit withstand time specifications.
