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Product Detailed Parameters
- Description：IGBT 600V 55A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：55 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 20A
- Power - Max：175 W
- Switching Energy：300µJ (on), 1.28mJ (off)
- Input Type：Standard
- Gate Charge：96 nC
- Td (on/off) @ 25°C：21.5ns/180ns
- Test Condition：480V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP30NC60S is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the PowerMESH™ series, manufactured by STMicroelectronics. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 55 A at 25°C. The device supports a pulsed collector current of 150 A and dissipates up to 175 W of power. Key electrical parameters include a gate charge of 96 nC and a saturation voltage of 1.9 V at 15 V gate drive and 20 A collector current. Switching energies are specified as 300 µJ for turn-on and 1.28 mJ for turn-off under test conditions of 480 V, 20 A, 10 Ω gate resistance, and 15 V gate voltage. The component operates within a junction temperature range of -55°C to 150°C and is housed in a TO-220 package.
Feature Summary
- Utilizes advanced PowerMESH™ technology to balance switching performance with low on-state behavior.
- Features a low CRES/CIES ratio to minimize susceptibility to cross-conduction.
Applications
- High frequency inverters
- Motor drives
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS3 compliance status and check for specific ordering suffixes that may affect packaging or pinout. Review official datasheets for absolute maximum ratings to ensure operational safety margins are maintained during integration.
Selection Notes
Select this component for applications requiring high current handling in a standard through-hole package. Evaluate thermal management requirements based on the 175 W power dissipation rating. Ensure gate drive circuits can supply the necessary 96 nC charge efficiently. Compare switching energy values against system efficiency targets to validate suitability for the intended frequency range.
Part Context
This IGBT belongs to the STGP30 family, designed for general-purpose power switching. It shares the PowerMESH™ process characteristics found across similar STMicroelectronics devices. The TO-220 form factor provides robust mechanical stability for industrial environments. It serves as a discrete solution for medium-power conversion tasks.
Replacement Considerations
Check for direct substitutes within the STGP30 series or other 600V 55A TO-220 IGBTs. Verify pin compatibility and electrical parameter equivalence before substitution. Consult official replacement guides for end-of-life notifications.
