STGP3HF60HD

Overview

The STGP3HF60HD is a discrete Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a 600 V collector-emitter voltage rating and a continuous collector current of 4.5 A at 25 °C. The device utilizes advanced planar technology to achieve low conduction losses and stable switching performance across temperatures. Key electrical parameters include a collector-emitter saturation voltage of 1.9 V and a maximum power dissipation of 1.7 W. It is housed in a TO-220FP package with through-hole mounting, operating within a temperature range of -55 °C to +150 °C.

Feature Summary

• Advanced planar technology for stable switching performance versus temperature
• Minimal tail current and low conduction losses
• Ultrafast soft recovery antiparallel diode

Applications

• High-frequency converters requiring optimized efficiency
• Power supplies utilizing fast switching IGBTs
• Industrial motor control applications

Procurement Notes

Verify the specific ordering suffix and package variant when sourcing this component. Confirm RoHS compliance status through official documentation prior to integration. Check for any recent process change notifications or lifecycle updates directly from the manufacturer to ensure long-term availability and parameter consistency during production.

Selection Notes

Select this component for designs requiring a balance between low conduction loss and fast switching speed. The integrated ultrafast diode simplifies circuit topology for inductive loads. Ensure thermal management strategies account for the 1.7 W power dissipation limit in the TO-220FP package under expected operating conditions.

Part Context

This part belongs to STMicroelectronics' high-speed IGBT family designed for high-frequency operation. It complements other devices in the series by offering improved stability against temperature variations compared to standard planar technologies, targeting applications where switching efficiency is critical.

Replacement Considerations

Direct substitutes may include other 600 V, 4.5 A IGBTs with similar TO-220FP packaging and integrated ultrafast diodes from STMicroelectronics or other manufacturers. Verify pinout compatibility and thermal resistance specifications before substitution.