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The STGP3NC120HD is a single N-channel IGBT from STMicroelectronics, utilizing PowerMESH technology for optimized switching and conduction performance. It features a maximum collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 7 A at 25°C. The device operates within a junction temperature range of -55°C to +150°C, with a maximum power dissipation (Pd) of 75 W. Packaged in a TO-220-3 through-hole configuration, it exhibits a collector-emitter saturation voltage (VceSAT) of 2.2 V and a maximum gate-emitter voltage (VGEO) of ±20 V.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal specifications. Ensure that the procurement channel sources components directly from authorized distributors or verified manufacturers to prevent counterfeit parts. Cross-reference the lot code and date code with recent production notices to confirm availability and manufacturing origin.
Select this component when a 1200 V rating is required alongside moderate current handling capabilities up to 7 A. The TO-220-3 package facilitates straightforward through-hole mounting for prototyping or lower-volume industrial assemblies. Consider the integrated ultrafast diode if synchronous rectification or freewheeling functions are needed without adding discrete components.
This part belongs to the STGP3NC120HD series, representing STMicroelectronics' PowerMESH family of very fast IGBTs. These devices are engineered using advanced strip layout technology to minimize switching losses while maintaining low conduction voltage drops, targeting efficiency improvements in medium-power electronic systems.
Direct substitutes include other STMicroelectronics IGBTs within the same 1200 V PowerMESH family, such as the STGF3NC120HD or STGB3NC120HDT4, provided the package type and current ratings align with the design requirements.