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Product Detailed Parameters
- Description：IGBT 600V 15A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：15 A
- Current - Collector Pulsed (Icm)：21 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 3A
- Power - Max：56 W
- Switching Energy：20µJ (on), 68µJ (off)
- Input Type：Standard
- Gate Charge：13.6 nC
- Td (on/off) @ 25°C：12ns/76ns
- Test Condition：390V, 3A, 10Ohm, 15V
- Reverse Recovery Time (trr)：21 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP6NC60HD is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the PowerMESH™ family, manufactured by STMicroelectronics. It utilizes a patented strip layout for high-frequency optimization. The device features a collector-emitter voltage rating of 600 V and a continuous collector current of 15 A at 25°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.9 V, a gate-emitter voltage range of ±20 V, and a power dissipation capacity of 56 W. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-220-3 through-hole package.
Feature Summary
- PowerMESH™ technology optimized for high-frequency applications with reduced fall time
- Low on-state voltage drop for improved efficiency
- Very soft ultra-fast recovery antiparallel diode
- Low CRES/CIES ratio to prevent cross-conduction susceptibility
Applications
- Switching Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) circuits
- Hard switching topologies
- Resonant converter topologies
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and terminal finish specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to procurement. Ensure thermal management requirements align with the specified power dissipation limits.
Selection Notes
Select this component for designs requiring fast switching speeds combined with low conduction losses in the 600 V class. The integrated anti-parallel diode simplifies circuit topology for half-bridge or synchronous rectification applications. Evaluate thermal resistance values against the expected ambient conditions to determine appropriate heatsinking for the TO-220 package.
Part Context
This IGBT belongs to the STGP6NC60 series, part of the broader PowerMESH™ lineup designed for high-performance power conversion. It shares architectural similarities with other members like the STGP7NC60HD but offers specific current ratings suited for moderate power applications. The series emphasizes the trade-off between switching speed and on-state voltage drop.
Replacement Considerations
Direct pin-compatible substitutes within the same PowerMESH™ family include the STGP7NC60HD and STGP10NC60HD, which offer higher current ratings. Cross-family replacements require verification of switching characteristics and thermal performance to ensure compatibility with existing drive circuits and thermal constraints.
