STGP7NB60KD

Overview

The STGP7NB60KD is a 600 V, 7 A N-channel PowerMESH IGBT designed for high-frequency motor control and resonant topologies. It features a short-circuit withstand time of 10 µs at Tj=125°C and is co-packaged with a TurboSwitch antiparallel diode. Key electrical parameters include a collector-emitter saturation voltage (VCE(sat)) of less than 2.8 V at IC=7A and VGE=15V, a gate threshold voltage (VGE(th)) ranging from 5 to 7 V, and a total gate charge (Qg) of 45 nC. The device operates with a maximum junction temperature of 150 °C and offers low on-voltage drop and high current capability.

Feature Summary

• Short-circuit rugged design with 10 µs withstand capability
• Co-packaged TurboSwitch antiparallel diode for soft recovery
• Optimized for high-frequency operation in motor control applications

Applications

• High frequency motor controls
• SMPS and PFC in hard switching topologies
• Resonant converter topologies

Procurement Notes

Verify the specific package variant required, as the part number suffix indicates the housing type: 'STGP' denotes TO-220 tube packaging, while 'STGB' corresponds to D2PAK tape and reel. Confirm that the application circuitry supports the specified 10 µs short-circuit withstand limit under worst-case thermal conditions. Ensure gate drive voltages remain within the ±20 V absolute maximum rating to prevent insulation breakdown.

Selection Notes

Select this component when designing circuits requiring both high switching frequencies and robust fault tolerance. The integrated TurboSwitch diode reduces external component count and improves efficiency in resonant or soft-switching scenarios. Compare the 10 µs short-circuit duration against potential fault currents in the target system to ensure adequate protection margins without triggering premature shutdown.

Part Context

This device belongs to the PowerMESH family utilizing a patented strip layout technology. The 'K' suffix specifically identifies the sub-family optimized for high-frequency motor control applications featuring short-circuit withstand capability. It complements other variants like the STGP7NC60HD which focuses on general fast switching performance.

Replacement Considerations

• STGB7NB60KD
• STGP7NB60KDFP

FAQ

What is the maximum short-circuit withstand time for the STGP7NB60KD?

The device has a short-circuit withstand time of 10 µs when tested at a junction temperature of 125°C with a gate resistance of 10 Ω.

How does the antiparallel diode behave during reverse recovery?

The co-packaged TurboSwitch diode provides very soft ultra-fast recovery characteristics, minimizing reverse recovery charge (Qrr) and current (Irrm) to reduce switching losses and EMI.

What is the typical gate threshold voltage range?

The gate threshold voltage (VGE(th)) ranges from a minimum of 5 V to a maximum of 7 V, measured at IC = 250 µA.