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Product Detailed Parameters
- Description：IGBT 600V 25A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：25 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 7A
- Power - Max：80 W
- Switching Energy：95µJ (on), 115µJ (off)
- Input Type：Standard
- Gate Charge：35 nC
- Td (on/off) @ 25°C：18.5ns/72ns
- Test Condition：390V, 7A, 10Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP7NC60HD is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics, utilizing advanced PowerMESH technology. It features a TO-220-3 FP through-hole package with three pins. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 25 A at 25°C. The device exhibits a collector-emitter saturation voltage (Vce(sat)) of 2.5 V and a power dissipation (Pd) of 80 W. It operates within a temperature range of -55°C to +150°C, with a maximum gate-emitter voltage of ±20 V and a switching speed of 1 MHz.
Feature Summary
- Advanced PowerMESH technology ensures an optimal balance between low on-state voltage drop and high switching performance.
- Low CRES/CIES ratio minimizes susceptibility to cross-conduction in bridge configurations.
- Integrated ultra-fast recovery antiparallel diode provides very soft reverse recovery characteristics.
Applications
- Switched-mode power supplies (SMPS)
- Power factor correction (PFC) circuits
- Hard-switching and resonant converter topologies
Procurement Notes
Verify the specific ordering suffix and packaging configuration against the manufacturer's latest datasheet before procurement. Confirm that the component meets required RoHS compliance standards for the target market. Ensure thermal management solutions are adequate for the specified 80 W power dissipation rating under actual operating conditions.
Selection Notes
Select this component when a 600 V IGBT with integrated fast recovery diode is required for medium-power applications. The 25 A continuous current rating suits designs needing higher capacity than lower-current variants like the STGP6NC60HD. Consider the TO-220-3 FP package for board-level mounting where heat sinking via the flange is feasible.
Part Context
This part belongs to the STGP series of very fast IGBTs from STMicroelectronics. It shares the same core PowerMESH technology and voltage rating as other members like the STGP10NC60HD but differs in current handling capabilities and specific package variations within the broader family.
Replacement Considerations
Direct substitutes may include STGP6NC60HD or STGP10NC60HD depending on whether lower or higher current ratings are acceptable. Verify pinout compatibility and thermal resistance differences when replacing with these related models.
