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The STGP8H60DF2 is a single N-channel IGBT from the H series, utilizing trench gate field-stop technology. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 8 A at 25°C. The device has a typical saturation voltage of 1.9 V and operates within a junction temperature range of -55°C to +175°C. Packaged in TO-3P, it offers low thermal resistance and short-circuit ruggedness.
Verify the specific suffix DF2 against official datasheets to confirm pinout and electrical characteristics match design requirements. Confirm availability status as product lifecycles change. Request manufacturer documentation for final validation before integration.
Select this component for applications requiring high-speed switching with low conduction losses. The tight parameter distribution supports parallel operation. Ensure thermal management meets the specified junction temperature limits for reliable long-term operation.
This part belongs to the STMicroelectronics H series of IGBTs. The series is designed to balance conduction and switching losses for high-efficiency power conversion. It uses advanced trench gate field-stop technology developed by the manufacturer.
Check for direct replacements like STGP8H60DF if the DF2 suffix denotes a specific packaging or tape-and-reel variant. Verify electrical parameters and package dimensions match exactly before substitution.