STGP8M120DF3

Overview

The STGP8M120DF3 is a trench gate field-stop IGBT from the M series, rated at 1200 V and 8 A continuous collector current at 100 °C. It features a typical saturation voltage of 1.85 V at 8 A and supports a maximum junction temperature of 175 °C. The device includes an integrated antiparallel diode with soft and fast recovery characteristics. Key electrical parameters include a minimum short-circuit withstand time of 10 µs, a thermal resistance junction-case of 0.9 °C/W for the IGBT, and a total switching energy of 0.76 mJ at 25 °C. It is housed in a TO-220 package.

Feature Summary

• Advanced proprietary trench gate field-stop structure for optimal balance between performance and efficiency
• Positive VCE(sat) temperature coefficient and tight parameter distribution for safer paralleling operation
• Soft and very fast recovery antiparallel diode
• Low thermal resistance

Applications

• Industrial drives
• UPS
• Solar inverters
• Welding equipment
• General-purpose inverters

Procurement Notes

Verify the specific ordering code STGP8M120DF3 against the manufacturer's official documentation to confirm current production status and environmental compliance grades. Ensure that the required packing format matches the available supply options, as packaging configurations may vary by region or distributor channel. Cross-reference the datasheet revision history to ensure all technical specifications align with the latest published data before finalizing procurement orders.

Selection Notes

Select this component for applications requiring robust short-circuit ruggedness and efficient power conversion at moderate current levels. The positive temperature coefficient facilitates safe parallel operation without complex current balancing circuits. Consider the thermal resistance values when designing heatsinking solutions to maintain junction temperatures within the specified 175 °C limit under varying load conditions and ambient temperatures.

Part Context

This device belongs to the M series IGBT family, which utilizes advanced trench gate field-stop technology. The series is designed to provide an optimal balance between inverter system performance and efficiency, particularly where low-loss and short-circuit functionality are essential. It shares structural similarities with other M series devices like the STGYA50M120DF3 but differs in current rating and package type.

Replacement Considerations

Direct substitutes within the same M series include the STGW40M120DF3 and STGWA25M120DF3, though these offer different current ratings. When replacing, verify that the alternative part's voltage rating, current capacity, and thermal characteristics meet the original design requirements. Ensure compatibility with existing gate drive circuits and PCB layouts.

FAQ

What is the minimum short-circuit withstand time for the STGP8M120DF3?

The device has a minimum short-circuit withstand time of 10 µs.

Does the STGP8M120DF3 have a positive temperature coefficient?

Yes, it features a positive VCE(sat) temperature coefficient, which aids in safer paralleling operation.

What is the typical saturation voltage at 8 A?

The typical collector-emitter saturation voltage (VCE(sat)) is 1.85 V at IC = 8 A.