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Product Detailed Parameters
- Description：IGBT 600V 15A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：15 A
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.75V @ 15V, 3A
- Power - Max：65 W
- Switching Energy：55µJ (on), 85µJ (off)
- Input Type：Standard
- Gate Charge：19 nC
- Td (on/off) @ 25°C：17ns/72ns
- Test Condition：390V, 3A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP8NC60K is a very fast Insulated Gate Bipolar Transistor (IGBT) developed using advanced PowerMESH technology. It features an integrated antiparallel diode with ultra-fast recovery characteristics. The device is designed to provide an excellent trade-off between switching performance and low on-state behavior, making it suitable for resonant or soft-switching applications. Key electrical parameters include a collector-emitter voltage of 600 V and a continuous collector current of 8 A at 25°C. It offers a short-circuit withstand time of 10 μs.
Feature Summary
- Advanced PowerMESH technology ensures low on-state voltage drop and optimized switching performance.
- Low C_res / C_ies ratio eliminates susceptibility to cross-conduction.
- Integrated very soft ultra-fast recovery antiparallel diode reduces switching losses.
- Short-circuit ruggedness provides a 10 μs withstand time for enhanced reliability.
Applications
- Resonant converter circuits
- Soft-switching power supplies
- High-frequency inverter applications
Procurement Notes
Verify the exact suffix of the part number during procurement. Datasheets indicate the active product line includes the STGP8NC60KD variant with specific packaging or tape-and-reel options. Confirm that the ordered component matches the required short-circuit rugged specifications and package type to ensure compatibility with the intended circuit design.
Selection Notes
Select this IGBT for designs requiring high-speed switching with minimal cross-conduction risk. The low C_res / C_ies ratio is critical for preventing unwanted turn-on in bridge configurations. Ensure the application operates within the 10 μs short-circuit limit and leverages the soft-recovery diode to minimize reverse recovery charge effects in resonant topologies.
Part Context
This component belongs to STMicroelectronics' STGP series of short-circuit rugged IGBTs. It shares the PowerMESH process with related models like the STGP8NC60KD and STGP10NC60HD. The 'K' designation typically indicates specific ruggedness features, while the '8N' denotes the 8 A current rating and 600 V blocking capability.
Replacement Considerations
The STGP8NC60KD is a closely related variant within the same family, offering identical electrical characteristics but potentially different packaging or reel specifications. Verify pinout compatibility and thermal resistance values when substituting with other 600 V, 8 A IGBTs from the STGP series.
