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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 30A TO-247
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 15A
- Power - Max：259 W
- Switching Energy：380µJ (on), 370µJ (off)
- Input Type：Standard
- Gate Charge：67 nC
- Td (on/off) @ 25°C：23ns/111ns
- Test Condition：600V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The STGW15H120F2 is a high-speed N-channel IGBT from the H series, utilizing an advanced trench gate field-stop structure. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 15 A at 25°C, with a pulsed current rating of 30 A. The typical saturation voltage is 2.1 V at 15 A. Operating within a junction temperature range of -55°C to +175°C, it offers a power dissipation capacity of 259 W in a TO-247-3 package.
Feature Summary
- Optimized for high switching frequency applications through minimized tail current and low saturation voltage.
- Provides safe paralleling operation due to slightly positive VCE(sat) temperature coefficient and tight parameter distribution.
- Features a very fast recovery antiparallel diode for efficient soft switching performance.
Applications
- High-frequency converters
- Uninterruptible power supplies (UPS)
- Welding machines
- Photovoltaic inverters
Procurement Notes
Verify the specific suffix DF2 against the target datasheet revision to ensure compatibility with required short-circuit withstand times and thermal characteristics. Confirm RoHS compliance status and packaging type (Tube) matches assembly requirements before finalizing orders.
Selection Notes
Select this component when designing circuits requiring high efficiency at elevated switching frequencies. Ensure the gate drive circuit supports the specified ±20 V limits and that the thermal management system can handle the 259 W dissipation rating under worst-case operating conditions.
Part Context
This device belongs to STMicroelectronics' H series of trench gate field-stop IGBTs. This family is engineered to balance conduction and switching losses, targeting applications where minimizing energy loss during frequent transitions is critical for overall system efficiency.
Replacement Considerations
Direct substitutes include STGW15H120DF and STGW15H120F. Verify pinout compatibility and electrical parameters such as VCE(sat) and switching speeds before implementation.
