STGW15M120DF3

Overview

The STGW15M120DF3 is a single N-channel IGBT from the M-Series, utilizing trench gate field-stop technology. It features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 15 A at 25°C. The device has a maximum power dissipation of 259 W in a TO-247 package. Key electrical parameters include a typical saturation voltage of 1.85 V at 15 A and a short-circuit withstand time of 10 μs. Operating junction temperature ranges from -55°C to +175°C.

Feature Summary

• Trench gate field-stop structure for optimized switching and conduction performance
• Positive VCE(sat) temperature coefficient enabling safe parallel operation
• Soft and fast-recovery antiparallel diode integrated with the IGBT

Applications

• High-efficiency inverter systems
• Motor drives requiring low-loss switching
• Industrial power supplies

Procurement Notes

Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm RoHS compliance status as per latest datasheet revisions. Check for end-of-life notices or obsolescence warnings before finalizing procurement plans. Ensure storage conditions meet specified humidity sensitivity levels.

Selection Notes

Select this component for applications demanding high efficiency and robust short-circuit capability. The tight parameter distribution facilitates reliable paralleling for higher current requirements. Consider thermal management solutions suitable for the TO-247 package given the 259 W power dissipation rating.

Part Context

Part of the STMicroelectronics M-Series IGBT lineup, designed for balance between inverter system performance and efficiency. This series emphasizes low-loss characteristics and short-circuit functionality essential for modern power electronics.

Replacement Considerations

STGWA15M120DF3 offers equivalent electrical specifications with long leads. STGW15H120DF2 provides similar voltage ratings but differs in current handling and switching speed characteristics.