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The STGW19NC60H is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a collector-emitter voltage rating of 600 V and a continuous collector current of 19 A at a case temperature of 25 °C, increasing to 42 A at 100 °C. The device utilizes advanced PowerMESH technology for optimized switching performance and low on-state behavior. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a TO-247-3 package designed for through-hole mounting.
Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Request original manufacturer documentation and traceability records upon inquiry. Confirm specific ordering suffixes match the required technical specifications exactly. Ensure storage conditions adhere to moisture sensitivity levels defined in the datasheet prior to assembly.
Select this component for designs requiring high-speed switching capabilities combined with low conduction losses. The integrated ultra-fast diode simplifies circuit topology by eliminating external freewheeling diodes. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values under expected load conditions.
This part belongs to the STGW series of very fast IGBTs with ultra-fast diodes. It shares core technological characteristics with models such as STGW19NC60HD and STGB19NC60HDT4. These devices are engineered for applications demanding efficient power conversion and robust switching performance in compact packages.
Direct substitutes include STGW19NC60HD and STGB19NC60HDT4. Verify pinout compatibility and exact electrical parameter alignment before implementation. Review updated datasheets for any revisions in thermal characteristics or packaging details compared to legacy versions.