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Product Detailed Parameters
- Description：IGBT 600V 42A TO247
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：42 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 12A
- Power - Max：140 W
- Switching Energy：85µJ (on), 189µJ (off)
- Input Type：Standard
- Gate Charge：53 nC
- Td (on/off) @ 25°C：25ns/97ns
- Test Condition：390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr)：31 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 Long Leads
- Grade：-
- Qualification：-
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Overview
The STGW19NC60HD is a very fast N-channel IGBT with an integrated ultra-fast recovery antiparallel diode, rated for 600 V collector-emitter voltage and 19 A continuous collector current at 25 °C case temperature. Developed using advanced PowerMESH technology, it offers low on-state voltage drop (VCE(sat)) and optimized switching performance. The device supports a junction temperature range of -55 to 150 °C and features thermal resistance values of 0.9 °C/W (junction-to-case) for the IGBT and 33 °C/W (junction-to-ambient). It is designed for high-frequency applications requiring excellent trade-offs between conduction losses and switching speed.
Feature Summary
- Advanced PowerMESH technology ensures low on-state voltage drop and efficient switching behavior.
- Integrated ultra-fast recovery antiparallel diode provides soft switching characteristics.
- Optimized for high-frequency operation with reduced fall time while maintaining low voltage drop.
Applications
- High frequency motor controls
- SMPS and PFC in hard switch topologies
- Resonant converter topologies
Procurement Notes
Verify the specific ordering suffix and package variant (e.g., TO-247) against the manufacturer's current datasheet revision DS4967. Confirm active product status and availability through authorized STMicroelectronics distributors. Ensure thermal management design aligns with the specified RthJC and RthJA values for reliable operation under intended load conditions.
Selection Notes
Select this component for designs requiring 600 V blocking capability and 19 A continuous current handling. The PowerMESH process makes it suitable where low conduction loss and fast switching are critical. Evaluate gate drive requirements to leverage the reduced tfall and ensure compatibility with the ±20 V gate-emitter voltage rating for robust performance in resonant or hard-switched circuits.
Part Context
This part belongs to the STMicroelectronics PowerMESH IGBT family, specifically the 'H' suffix series optimized for high-frequency applications. It shares technological foundations with models like STGB19NC60HDT4 and STGP19NC60HD, focusing on balancing low VCE(sat) with rapid switching transitions for efficient power conversion systems.
Replacement Considerations
Direct substitutes within the same family include STGB19NC60HDT4 and STGP19NC60HD, which share similar electrical ratings and PowerMESH technology. Verify pinout compatibility and thermal characteristics before substitution to ensure equivalent performance in the target application circuit.
