SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The STGW19NC60WD is an N-channel IGBT from the PowerMESH™ family, optimized for very high frequency applications. It features a collector-emitter voltage of 600V and a continuous collector current of 23A at 100°C. The device utilizes advanced strip layout technology to achieve low on-state voltage drop (max 2.5V) and soft ultra-fast recovery characteristics in its integrated antiparallel diode. Packaged in TO-247, it supports junction temperatures up to 150°C.
Verify component authenticity through authorized channels. Confirm package integrity and marking accuracy against official datasheet specifications. Ensure storage conditions remain within specified limits prior to installation. Review revision history for any process changes that may affect compatibility with existing designs.
Select this component when high switching frequencies are required alongside low conduction losses. The specific 'W' suffix indicates optimization for very high frequency applications compared to standard variants. Evaluate thermal management requirements based on the provided junction-to-case resistance values for your specific mounting configuration.
This part belongs to the STGP19NC60WD/STGW19NC60WD series developed using patented strip layout technology. The 'W' suffix specifically identifies the variant optimized for very high frequency applications. It shares core electrical ratings with the 'P' variant but differs in packaging, utilizing the TO-247 form factor instead of TO-220.
The STGP19NC60WD serves as a direct functional equivalent differing only in package type (TO-220 vs TO-247). Verify mechanical footprint compatibility before substitution. Other members of the PowerMESH family may offer similar electrical performance but require individual datasheet verification for pinout and thermal parameters.