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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 40A TO-247-3
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 20A
- Power - Max：168 W
- Switching Energy：77µJ (on), 170µJ (off)
- Input Type：Standard
- Gate Charge：120 nC
- Td (on/off) @ 25°C：30ns/139ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The STGW20H65FB is an N-channel IGBT from the HB series, packaged in a TO-247 through-hole configuration. It features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 80 A at 25°C. The device has a maximum power dissipation (Pd) of 283 W and operates within a temperature range of -55°C to 175°C. Key electrical parameters include a typical collector-emitter saturation voltage (VceSAT) of 2.3 V and a switching speed of 1 MHz. The gate-emitter voltage rating is ±20 V.
Feature Summary
- Utilizes trench gate field-stop technology for optimized conduction and switching performance.
- Designed for high-speed applications with minimized tail current characteristics.
- Features a positive Vce(sat) temperature coefficient for stable parallel operation.
Applications
- High-frequency motor drives
- Switch-mode power supplies
- Induction heating systems
Procurement Notes
Verify the specific suffix against official datasheets to confirm exact electrical tolerances and packaging variations. Ensure compatibility with existing thermal management solutions given the 283 W dissipation rating. Confirm RoHS compliance status for regulatory adherence in target markets.
Selection Notes
Select this component for designs requiring 650 V blocking capability with high current handling in a TO-247 package. Compare VceSAT values against alternative HB series variants to balance conduction losses versus switching frequency requirements. Validate gate drive voltage limits to prevent exceeding the ±20 V rating.
Part Context
This part belongs to STMicroelectronics' HB series of high-speed IGBTs. It shares the trench gate field-stop architecture found in related models like the STGWA20HP65FB2 but differs in specific current ratings and package lead configurations. It serves as a discrete solution for medium-to-high power conversion tasks.
Replacement Considerations
Direct substitutes include other 650 V, 80 A TO-247 IGBTs from the same family, such as the STGW40H65FB, provided pinout and thermal resistance specifications match the design constraints.
