ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 60A TO-247-3
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
- Power - Max：200 W
- Switching Energy：220µJ (on), 330µJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：31ns/100ns
- Test Condition：390V, 20A, 3.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
Download product information
Overview
The STGW20NC60V is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes the advanced PowerMESH process to achieve an optimal balance between switching performance and low on-state behavior. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 30 A at 25°C. It operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 200 W in a TO-247-3 through-hole package.
Feature Summary
- Advanced PowerMESH technology for optimized trade-off between switching performance and low on-state conduction losses
- High-frequency operation capability up to 50 kHz
- Reduced C_res / C_ies ratio to minimize susceptibility to cross-conduction
Applications
- High-frequency power conversion circuits
- Motor drive systems requiring high current capability
- Industrial inverters and converters
Procurement Notes
Verify component authenticity against official STMicroelectronics documentation. Confirm that the specific part marking matches the STGW20NC60V designation. Ensure the TO-247-3 package type aligns with thermal and mechanical design requirements. Check for any specific handling precautions related to the silicon technology used.
Selection Notes
Select this IGBT when designing circuits requiring 600 V blocking capability and 30 A continuous current. The PowerMESH process makes it suitable for applications operating at frequencies up to 50 kHz. Consider the 200 W power dissipation limit and the -55°C to +150°C operating range for thermal management planning.
Part Context
This component belongs to the STGW series of discrete IGBTs from STMicroelectronics. It is designed for general-purpose high-power switching applications. The device represents a specific configuration within the manufacturer's portfolio, focusing on efficiency and reliability in medium-power industrial electronics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing circuit designs before considering alternative components from other manufacturers or different STMicroelectronics series.
